Surface characterization of NdF3 layers on Si(111) substrates grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Epitaxial growth of Si films on CaF2/Si structures with thin Si layers predeposited at room temperature
2. GaAs/(Ca,Sr)F2/(001) GaAs lattice‐matched structures grown by molecular beam epitaxy
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4. Epitaxial growth of CaF2 on GaAs(100)
5. Epitaxial relations in CaxSr1−xF2films grown on GaAs {111} and Ge(111) substrates
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation of interfacial microstructures of MBE-grown NdF3/Si (111) heterostructures;Journal of Crystal Growth;2002-12
2. Molecular beam epitaxy of rare-earth trifluoride, RF3 (R=Ce, Nd, Er, Lu) layers;Optical Materials;2002-02
3. Structural Analysis of Sol-Gel-Derived LaNiO3(100)/CeO2(100)/Si(100) Heterostructures.;Journal of the Ceramic Society of Japan;2001
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