Epitaxial relations in CaxSr1−xF2films grown on GaAs {111} and Ge(111) substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95732
Reference8 articles.
1. Formation of an Epitaxial Si/Insulator/Si Structure by Vacuum Deposition of CaF2and Si
2. Epitaxial relations in group‐IIa fluoride/Si(111) heterostructures
3. Heteroepitaxial Growth of Group-IIa-Fluoride Films on Si Substrates
4. Epitaxial relations in alkaline earth fluoride–semiconductor systems
5. Rutherford backscattering/channeling and transmission electron microscopy analysis of epitaxial BaF2 films on Ge and InP
Cited by 33 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth of Thin Epitaxial CaxSr1-xF2/SrF2Layers with Low Leakage Current on Ge Substrates;Japanese Journal of Applied Physics;2013-10-01
2. Type B epitaxy of Ge on CaF2(111) surface;Surface Science;2010-09
3. Small angle grain boundary Ge films on biaxial CaF2/glass substrate;Journal of Crystal Growth;2010-02
4. Growth of ultra-thin fluoride heterostructures on Ge(111) for quantum devices;Journal of Crystal Growth;2009-03
5. Investigation of interfacial microstructures of MBE-grown NdF3/Si (111) heterostructures;Journal of Crystal Growth;2002-12
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3