Growth of ultra-thin fluoride heterostructures on Ge(111) for quantum devices-Reference-Cited by-同舟云学术

Growth of ultra-thin fluoride heterostructures on Ge(111) for quantum devices

Published:2009-03 Issue:7 Volume:311 Page:2224-2226
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Oshita Takao,Takahashi Keita,Tsutsui Kazuo

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference6 articles.

1. Study of band offsets in CdF2/CaF2/Si(111) heterostructures using x‐ray photoelectron spectroscopy

2. CdF2/CaF2Resonant Tunneling Diode Fabricated on Si(111)

3. Negative Differential Resistance of CaF 2/CdF 2 Triple-Barrier Resonant-Tunneling Diode on Si(111) Grown by Partially Ionized Beam Epitaxy

4. Heteroepitaxy of Cd-Rich CaxCd1-xF2Alloy on Si Substrates and Its Application to Resonant Tunneling Diodes

5. FACT Reaction Web, 〈http://www.crct.polymtl.ca/fact/index.php〉, developed by C.W. Bale, A.D. Pelton at École Polytechnique and W.T. Thompson at McGill University.

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of Thin Epitaxial CaxSr1-xF2/SrF2Layers with Low Leakage Current on Ge Substrates;Japanese Journal of Applied Physics;2013-10-01

2. Light emission from the Au/CaF 2 /p-Si(111) capacitors: Evidence for an elastic electron tunneling through a thin (1–2 nm) fluoride layer;Thin Solid Films;2013-10

3. Type B epitaxy of Ge on CaF2(111) surface;Surface Science;2010-09

4. Small angle grain boundary Ge films on biaxial CaF2/glass substrate;Journal of Crystal Growth;2010-02