Type B epitaxy of Ge on CaF2(111) surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference20 articles.
1. Photoemission study of bonding at theCaF2-on-Si(111) interface
2. Initial stages of epitaxial semiconductor-insulator heterointerface formation
3. Structural transitions of theCaF2/Si(111) interface
4. Kinetic Instability in the Growth of CaF2on Si(111)
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3. Modular Approach for Metal–Semiconductor Heterostructures with Very Large Interface Lattice Misfit: A First-Principles Perspective;Crystal Growth & Design;2016-03-24
4. Orientation epitaxy of Ge1−xSnxfilms grown on single crystal CaF2substrates;CrystEngComm;2016
5. Biaxially oriented CdTe films on glass substrate through nanostructured Ge/CaF2buffer layers;Materials Research Express;2015-09-10
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