Epitaxial growth of CaF2 on GaAs(100)-Reference-Cited by-同舟云学术

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Epitaxial growth of CaF2 on GaAs(100)

Published:1985-05 Issue:3 Volume:3 Page:842-845
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Sinharoy S.,Hoffman R. A.,Rieger J. H.,Farrow R. F. C.,Noreika A. J.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.573327

Cited by 38 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spectroscopy of Tm3+-doped CaF2 waveguiding thin films grown by Liquid Phase Epitaxy;Journal of Luminescence;2021-10

2. Studies of the growth kinetics of CaF2(111) by molecular beam methods and atomic force microscopy;Surface Science;2005-11

3. Studies of the facetting of the polished (100) face of CaF2;Journal of Crystal Growth;2003-04

4. Theoretical study of the adsorption of a CaF2 molecule at the (111) surface of CaF2 I. Equilibrium adsorption positions;Surface Science;2003-03

5. Investigation of interfacial microstructures of MBE-grown NdF3/Si (111) heterostructures;Journal of Crystal Growth;2002-12

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