Growth of Sr1−xBaxF2films on InAs by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334177
Reference12 articles.
1. Growth of Single‐Crystalline Epitaxial Group II Fluoride Films on InP ( 001 ) by Molecular‐Beam Epitaxy
2. Rutherford backscattering/channeling and transmission electron microscopy analysis of epitaxial BaF2 films on Ge and InP
3. MBE‐grown fluoride films: A new class of epitaxial dielectrics
4. Insulating epitaxial films of BaF2, CaF2 and BaxCa1−xF2 grown by MBE on InP substrates
5. Growth of single crystal SrF2(001)/GaAs(001) structures by molecular beam epitaxy
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1. The properties of fluoride/glass and fluoride/silicon;Thin Solid Films;2003-03
2. Investigation of interfacial microstructures of MBE-grown NdF3/Si (111) heterostructures;Journal of Crystal Growth;2002-12
3. Investigation of molecular beam epitaxial NdF[sub 3]/Si(111) heterostructures by atomic force microscopy and x-ray diffractometry;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
4. Molecular Beam Epitaxy;Handbook of Thin Film Deposition Processes and Techniques;2001
5. Surface characterization of NdF3 layers on Si(111) substrates grown by molecular beam epitaxy;Journal of Crystal Growth;2000-01
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