Growth of thallium containing III–V materials by gas-source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. InTlP — a proposed infrared detector material
2. New III-V Compound Semiconductors TlInGaP for $\bf 0.9\,{\mbi \mu}m$ to over $\bf 10\,{\mbi \mu}m$ Wavelength Range Laser Diodes and Their First Successful Growth
3. Incorporation of Thallium in IN1−xTIxP Grown by Metal Organic Molecular Beam Epitaxy
4. M.J. Antonell, C.R. Abernathy, A. Sher, M. Berding, M. van Schilfgaarde, Growth of Tl-containing III–V materials by gas-source molecular beam epitaxy, International Conference on Indium Phosphide and Related Materials, 11–15 May 1997, Cape Cod, MA, USA, pp. 444–447.
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1. Parameters for temperature dependence of mean-square displacements for B-, Bi- and Tl-containing binary III–V compounds;Acta Crystallographica Section A Foundations of Crystallography;2012-03-06
2. Limits in growing TlGaAs/GaAs quantum-well structures by low-temperature molecular-beam epitaxy;Materials Science and Engineering: B;2006-01
3. Experimental and theoretical investigation into the difficulties of thallium incorporation into III-V semiconductors;Physical Review B;2005-09-27
4. Thallium incorporation into GaAs(001) grown by solid source MBE: critical thickness and stability under annealing;Journal of Crystal Growth;2005-02
5. Optical absorption spectroscopy measurement of the gap shrinkage due to thallium incorporation in GaInTlAs alloys;Journal of Applied Physics;2003-08-15
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