Author:
Schowalter Marco,Rosenauer Andreas,Volz Kerstin
Publisher
International Union of Crystallography (IUCr)
Reference39 articles.
1. Growth of Tl-containing III–V materials by gas-source molecular beam epitaxy
2. New III-V Compound Semiconductors TlInGaP for $\bf 0.9\,{\mbi \mu}m$ to over $\bf 10\,{\mbi \mu}m$ Wavelength Range Laser Diodes and Their First Successful Growth
3. Blaha, P., Schwarz, K., Madsen, G. K. H., Kvasnicka, D. & Luitz, J. (2001). WIEN2k. An augmented plane wave + local orbitals program for calculating crystal properties. Karlheinz Schwarz, Techn. Universität Wien, Austria.
4. Born, M. & Huang, K. (1954). Dynamical Theory of Crystal Lattices. Oxford University Press.
5. Ground State of the Electron Gas by a Stochastic Method
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