Optical absorption spectroscopy measurement of the gap shrinkage due to thallium incorporation in GaInTlAs alloys
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1596374
Reference10 articles.
1. InTlP — a proposed infrared detector material
2. New III-V Compound Semiconductors TlInGaP for $\bf 0.9\,{\mbi \mu}m$ to over $\bf 10\,{\mbi \mu}m$ Wavelength Range Laser Diodes and Their First Successful Growth
3. Gas source MBE growth and characterization of TlInGaP and TlInGaAs layers for long wavelength applications
4. Growth of Tl-containing III–V materials by gas-source molecular beam epitaxy
5. Growth of thallium containing III–V materials by gas-source molecular beam epitaxy
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1. First-principles investigation of structural and electronic properties of TlxAl1−xP ternary alloys;Journal of Taibah University for Science;2021-01-01
2. Structural and electronic properties of GaxTl1−xP ternary alloys;Materials Science in Semiconductor Processing;2015-05
3. Bismuth-containing III–V semiconductors;Molecular Beam Epitaxy;2013
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