Gas source MBE growth and characterization of TlInGaP and TlInGaAs layers for long wavelength applications-Reference-Cited by-同舟云学术

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Gas source MBE growth and characterization of TlInGaP and TlInGaAs layers for long wavelength applications

Published:1999-05 Issue: Volume:201-202 Page:1069-1072
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Asahi H.,Koh H.,Takenaka K.,Asami K.,Oe K.,Gonda S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference8 articles.

1. New III-V Compound Semiconductors TlInGaP for $\bf 0.9\,{\mbi \mu}m$ to over $\bf 10\,{\mbi \mu}m$ Wavelength Range Laser Diodes and Their First Successful Growth

2. InTlP — a proposed infrared detector material

3. Energy Bands in Semiconductors;Long,1968

4. Gas source molecular beam epitaxy growth of TlInP for new infrared optical devices

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaTlAs Quantum Well Solar Cells for Sub-band Gap Absorption;MRS Advances;2019-07

2. Temperature-Insensitive Band-Gap III-V Semiconductors: Tl-III-V and III-V-Bi;Springer Handbook of Electronic and Photonic Materials;2017

3. Recent Advancement of Semiconductor Materials and Devices;Journal of the Society of Materials Science, Japan;2017

4. First-principles study of lattice dynamics in thallium-V compounds;Superlattices and Microstructures;2010-12

5. Structural stability of thallium–V compounds;Journal of Physics: Condensed Matter;2007-02-23

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