Bismuth-containing III–V semiconductors

Author:

Batool Zahida,Chatterjee Sangam,Chernikov Alexej,Duzik Adam,Fritz Rafael,Gogineni Chaturvedi,Hild Konstanze,Hosea Thomas J.C.,Imhof Sebastian,Johnson Shane R.,Jiang Zenan,Jin Shirong,Koch Martin,Koch Stephan W.,Kolata Kolja,Lewis Ryan B.,Lu Xianfeng,Masnadi-Shirazi Mostafa,Millunchick Joanna Mirecki,Mooney Patricia M.,Riordan Nathaniel A.,Rubel Oleg,Sweeney Stephen J.,Thomas John C.,Thränhardt Angela,Tiedje Thomas,Volz Kerstin

Publisher

Elsevier

Reference70 articles.

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2. Growth and characterization of InSbBi for long wavelength infrared photodetectors;Lee;Appl Phys Lett,1997

3. InAsBi alloys grown by organometallic vapor phase epitaxy;Huang;J Cryst Growth,1993

4. Proposal on a temperature-insensitive wavelength semiconductor laser;Oe;IEICE Trans Electron,1996

5. Characteristics of semiconductor alloy GaAs1−xBix;Oe;Jpn J Appl Phys,2002

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