Characterization of silicon-on-insulator wafers by photoluminescence under UV light excitation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Silicon-on-Insulator Technology;Colinge,1997
2. Characterization of bond and etch-back silicon-on-insulator wafers by photoluminescence under ultraviolet excitation
3. Photoluminescence Due to Degenerate Electron-Hole System in Silicon-on-Insulator Wafers under Ultraviolet Light Excitation
4. Luminescence due to electron-hole condensation in silicon-on-insulator
5. Defect Analysis in Bonded and H + Split Silicon-on-Insulator Wafers by Photoluminescence Spectroscopy and Transmission Electron Microscopy
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1. Photo-pseudo-metal–oxide–semiconductor field effect transistor for characterization of surface recombination in silicon on insulator materials;Journal of Applied Physics;2013-05-14
2. Infrared luminescence from spark-processed silicon;Journal of Physics and Chemistry of Solids;2008-01
3. Considerations for interpretation of luminescence from silicon-on-insulator light emitting structures;Semiconductor Science and Technology;2007-09-05
4. The influence of bond flexibility and molecular size on the chemically selective bonding of In2O and Ga2O on GaAs(001)-c(2×8)/(2×4);The Journal of Chemical Physics;2004-03-22
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