Sulphur doping of GaSb grown by atmospheric pressure MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Deep donors in GaSb grown by molecular beam epitaxy
2. Sulfur doping behavior of gallium antimonide grown by molecular‐beam epitaxy
3. Sulphur incorporation in GaSb layers grown by liquid phase electroepitaxy
4. Photoluminescence characterization of sulphur-doped GaSb grown by liquid phase electroepitaxy
5. Doping of InAs, GaSb and InPSb by low pressure MOVPE
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Synthesis of S-doped WO3 nanowires with enhanced photocatalytic performance towards dye degradation;Chemical Physics Letters;2016-05
2. Radiative-recombination transitions in sulphur-doped GaSb;Journal of Luminescence;2009-03
3. Electrical and optical properties of carbon-doped GaSb;Physical Review B;2003-04-16
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