Photoluminescence characterization of sulphur-doped GaSb grown by liquid phase electroepitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
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1. Electrical and material characterization of sulfur-implanted GaSb;Journal of Vacuum Science & Technology B;2019-05
2. Radiative-recombination transitions in sulphur-doped GaSb;Journal of Luminescence;2009-03
3. Photoluminescence characterisation of unintentional acceptors in MOVPE-grown GaInSb;Journal of Crystal Growth;2003-02
4. Origin of the photoluminescence line at 0.8 eV in undoped and Si-doped GaSb grown by MOVPE;Semiconductor Science and Technology;2001-12-19
5. Sulfide treatment of GaSb surface: influence on the LPE growth of InGaAsSb/AlGaAsSb heterostructures;Vacuum;2000-05
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