Photoluminescence characterisation of unintentional acceptors in MOVPE-grown GaInSb
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. InSb, GaSb, and GaInSb grown using trisdimethylaminoantimony
2. Photoluminescence studies on GaxIn1−xSb alloys
3. Photoluminescence of GaSb grown by metal-organic vapour phase epitaxy
4. Low temperature photoluminescence of tellurium-doped GaSb grown by molecular beam epitaxy
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optical properties of GaSb measured using photoluminescence and photoreflectance spectroscopy;Journal of the Korean Physical Society;2016-09
2. Optimization of growth parameters for MOVPE-grown GaSb and Ga1−xInxSb;Physica B: Condensed Matter;2012-05
3. Cathodoluminescence study of InxGa1−xSb crystals grown by the Bridgman method;Journal of Crystal Growth;2004-07
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