Low temperature photoluminescence of tellurium-doped GaSb grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference36 articles.
1. Gallium antimonide device related properties
2. High‐power diode‐laser‐pumped InAsSb/GaSb and GaInAsSb/GaSb lasers emitting from 3 to 4 μm
3. Observation of normal-incidence intersubband absorption inn-typeAl0.09Ga0.91Sb quantum wells
4. Growth properties of GaSb: The structure of the residual acceptor centres
5. Bound excitons at doubly ionizable acceptors in GaSb
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