Saturation of hole concentration in carbon-doped GaAs grown by metalorganic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Abruptp‐type doping profile of carbon atomic layer doped GaAs grown by flow‐rate modulation epitaxy
2. Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy
3. Characterization ofp‐type GaAs heavily doped with carbon grown by metalorganic molecular‐beam epitaxy
4. Metallic p-type GaAs and InGaAs grown by MOMBE
5. Very high carbon incorporation in metalorganic vapor phase epitaxy of heavily dopedp‐type GaAs
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