Characterization of high indium content metamorphic InGaAs/InAlAs modulation-doped heterostructures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
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1. Phase diagram of quantum Hall breakdown and nonlinear phenomena for InGaAs/InP quantum wells;Physical Review B;2018-10-24
2. Classical Effects in the Weak-Field Magnetoresistance of InGaAs/InAlAs Quantum Wells;JETP Letters;2018-02-27
3. Mobility in excess of 106 cm2/V s in InAs quantum wells grown on lattice mismatched InP substrates;Applied Physics Letters;2017-10-02
4. Position-sensitive multi-wavelength photon detectors based on epitaxial InGaAs/InAlAs quantum wells;Journal of Crystal Growth;2015-09
5. Growth variations and scattering mechanisms in metamorphic In0.75Ga0.25As/In0.75 Al0.25As quantum wells grown by molecular beam epitaxy;Journal of Crystal Growth;2015-09
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