Effects of barrier growth temperature on the properties of InGaN/GaN multi-quantum wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. The Blue Laser Diode;Nakamura,1997
2. Effect of silicon doping on the optical and transport properties of InGaN/GaN multiple-quantum-well structures
3. Mee-Yi Ryu, Young Jun Yu, Phil Won Yu, Eun-Joo Shin, Joo In Lee, Sung Kyu Yu, Eun Soon Oh, Ok Hyun Nam, Chul Soo Sone, Yong Jo Park, J. Korean Phys. Soc. 37 (2000) 989.
4. Influence of InGaN/GaN quantum-well structure on the performance of light-emitting diodes and laser diodes grown on sapphire substrates
5. I.H. Ho, Stringfellow, Appl. Phys. Lett. 69 (1996) 2701.
Cited by 44 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. The investigation of photoluminescence properties in InxGa1-xN/GaN multiple quantum wells structures with varying well number;Physica B: Condensed Matter;2022-04
2. Effects of different growth temperatures towards indium incorporation in InGaN quantum well heterostructure;International Journal of Nanotechnology;2022
3. Effect of low-temperature GaN cap layer thickness on the optoelectronic performance of InGaN green LEDs with V-shape pits;Semiconductor Science and Technology;2020-03-19
4. Enhance the electroluminescence efficiency of InGaN/GaN multiple quantum wells by optimizing the growth temperature of GaN barriers;Journal of Alloys and Compounds;2019-10
5. Effect of strain modification on crystallinity and luminescence of InGaN/GaN multiple quantum wells grown by MOCVD;Applied Physics A;2018-08-16
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3