Influence of InGaN/GaN quantum-well structure on the performance of light-emitting diodes and laser diodes grown on sapphire substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
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1. Radiative emission mechanism analysis of green InGaN/GaN light-emitting diodes with the Si-doped graded short-period superlattice;Journal of Luminescence;2023-01
2. The Mechanism of Layer Stacked Clamping (LSC) for Polishing Ultra-Thin Sapphire Wafer;Micromachines;2020-08-06
3. Polar ( In , Ga ) N / GaN Quantum Wells: Revisiting the Impact of Carrier Localization on the “Green Gap” Problem;Physical Review Applied;2020-04-27
4. Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2016-07
5. A versatile phenomenological model for the S-shaped temperature dependence of photoluminescence energy for an accurate determination of the exciton localization energy in bulk and quantum well structures;Journal of Physics D: Applied Physics;2014-01-10
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