Effect of strain modification on crystallinity and luminescence of InGaN/GaN multiple quantum wells grown by MOCVD
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Link
http://link.springer.com/article/10.1007/s00339-018-1958-x/fulltext.html
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4. Publisher Correction to: Effect of strain modification on crystallinity and luminescence of InGaN/GaN multiple quantum wells grown by MOCVD;Applied Physics A;2018-09-11
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