GdxSi grown with mass-analyzed low energy dual ion beam epitaxy technique-Reference-Cited by-同舟云学术

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GdxSi grown with mass-analyzed low energy dual ion beam epitaxy technique

Published:2002-07 Issue:3-4 Volume:242 Page:389-394
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Zhou Jian-ping,Chen Nuo-fu,Zhang Fu-qiang,Song Shu-lin,Chai Chun-lin,Yang Shao-yan,Liu Zhi-kai,Lin Lan-ying

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

2. (GaMn)As: GaAs-based III–V diluted magnetic semiconductors grown by molecular beam epitaxy

3. Control of magnetization reversal process by light illumination in ferromagnetic semiconductor heterostructure p-(In, Mn)As/GaSb

4. Electronic Properties of Semiconducting Silicides

5. Optical interband properties of some semiconducting silicides

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thickness dependence of the initial oxidation behaviors of Gd films grown on Si by laser molecular beam epitaxy;Journal of Wuhan University of Technology-Mater. Sci. Ed.;2012-04

2. Properties of Thermal Gadolinium Oxide Films on Silicon;Japanese Journal of Applied Physics;2005-05-10

3. A study of the formation of yttrium silicides epitaxially grown on Si(111);Surface and Interface Analysis;2004-08

4. Magnetic properties of silicon doped with gadolinium;Applied Physics A;2003-08

5. Magnetic properties and rectifying behaviour of silicon doped with gadolinium;Acta Physica Sinica;2003

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