Author:
Zhou Jian-Ping ,Chen Nuo-Fu ,Song Shu-Lin ,Chai Chun-Lin ,Yang Shao-Yan ,Liu Zhi-Kai ,Lin Lan-Ying ,
Abstract
The magnetic/nonmagnetic p-n junction was prepared by implanting gadolinium into the n-type silicon with low-energy dual-ion-beam epitaxy technology.The magnet ic layer GdxSi1-x shows excellent magnetic properties at r oom temperature. High magnetic moment 10μB per Gd atom is observed, which is interpreted by RKKY mechanism. Magnetic/nonmagnetic p-n junctions show rectifying behaviour, but no magnetoresistance is observed.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
3 articles.
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