Thickness dependence of the initial oxidation behaviors of Gd films grown on Si by laser molecular beam epitaxy-Reference-Cited by-同舟云学术

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Thickness dependence of the initial oxidation behaviors of Gd films grown on Si by laser molecular beam epitaxy

Published:2012-04 Issue:2 Volume:27 Page:191-194
ISSN:1000-2413
Container-title:Journal of Wuhan University of Technology-Mater. Sci. Ed.
language:en
Short-container-title:J. Wuhan Univ. Technol.-Mat. Sci. Edit.

Author:

Yan Dawei,Zhang Hong,Bai Li,Wang Xuemin,Zhang Weibin,Wang Yuying,Shen Changle,Peng Liping,Wu Weidong

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/s11595-012-0434-2.pdf

Reference22 articles.

1. Fukuda H, Yasuda M, Iwabuchi T. Characterization of SiO2/Si(100) Interface Structure of Ultrathin SiO2 Films Using Spatially Resolved Electron Energy Loss Spectroscopy[J]. Appl. Phys. Lett., 1992, 61(6): 693–695

2. Klein T M, Niu D, Epling W S, et al. Evidence of Aluminum Silicate Formation During Chemical Vapor Deposition of Amorphous Al2O3 Thin Films on Si(100)[J]. Appl. Phys. Lett., 1999, 75(25): 4 001–4 003

3. Lee B H, Jeon Y, Zawadzki K, et al. Effects of Interfacial Layer Growth on the Electrical Characteristics of Thin Titanium Oxide Films on Silicon[J]. Appl. Phys. Lett., 1999, 74(21): 3 143–3 145

4. Lee B H, Kang L, Qi W J, et al. Thermal Stability and Electrical Characteristics of Ultrathin Hafnium Oxide Gate Dielectric Reoxidized with Rapid Thermal Annealing[J]. Appl. Phys. Lett., 2000, 76(14): 1 926–1 928

5. Ngal T, Qi W J, Sharma R, et al. Electrical Properties of ZrO2 Gate Dielectric on SiGe[J]. Appl. Phys. Lett., 2000, 76(4): 88–90

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