Growth evolution of β-FeSi2 layers grown by Sb mediated reactive deposition epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Electronic properties of semiconducting FeSi2films
2. Heteroepitaxy of β-FeSi2on Si by gas-source MBE
3. Growth of β‐FeSi2on Si(111) by chemical beam epitaxy
4. Effect of Multiple-Step Annealing on the Formation of Semiconducting β-FeSi2and Metallic α-Fe2Si5on Si (100) by Ion Beam Synthesis
5. Low temperature growth of β-FeSi2 thin films on Si(100) by pulsed laser deposition
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1. Evaluation of bulk β-FeSi 2 crystal as a solar cell semiconductor through the photo-response measurements of Al/n-β-FeSi 2 Schottky diodes;Photonics for Solar Energy Systems II;2008-04-25
2. Optical properties of thin-film magnesium silicide prepared by electrochemical process;Electrochimica Acta;2007-11
3. Growth and morphological properties of β-FeSi2 layers;Applied Surface Science;2005-05
4. Growth of β-FeSi2 layers deposited from a molten salt;Thin Solid Films;2004-08
5. Microstructures of semiconducting silicide layers grown by novel growth techniques;Thin Solid Films;2004-08
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