Low temperature growth of β-FeSi2 thin films on Si(100) by pulsed laser deposition
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference10 articles.
1. A clarification of the index of refraction of beta‐iron disilicide
2. Electronic properties of semiconducting FeSi2films
3. Structural properties of ion‐beam‐synthesized β‐FeSi2in Si(111)
4. Generation of high‐energy atomic beams in laser‐superconducting target interactions
5. Growth of epitaxial β-FeSi2 thin films by pulsed laser deposition on silicon (111)
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1. Microscopic mechanism of ultrashort-pulse laser ablation of metals: a molecular dynamics study incorporating electronic entropy effects;Journal of Physics D: Applied Physics;2023-06-28
2. Investigation of morphological surface features, wetting behavior and mechanical traits under various substrate temperatures for beta iron disilicide prepared via facing-targets sputtering;Materials Science in Semiconductor Processing;2022-08
3. Impact of annealing temperature and carbon doping on the wetting and surface morphology of semiconducting iron disilicide formed via radio frequency magnetron sputtering;Thin Solid Films;2020-09
4. Production of p-Type Si/n-Type β-FeSi2 Heterojunctions Using Facing-Targets Direct-Current Sputtering and Evaluation of Their Resistance and Interface State Density;physica status solidi (a);2018-10
5. Temperature Dependent Current-Voltage Characteristics of n-Type Nanocrystalline-FeSi2/p-Type Si Heterojunctions Fabricated by Pulsed Laser Deposition;Advanced Materials Research;2013-11
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