Production of p-Type Si/n-Type β-FeSi2 Heterojunctions Using Facing-Targets Direct-Current Sputtering and Evaluation of Their Resistance and Interface State Density-Reference-Cited by-同舟云学术

Production of p-Type Si/n-Type β-FeSi2 Heterojunctions Using Facing-Targets Direct-Current Sputtering and Evaluation of Their Resistance and Interface State Density

Published:2018-10 Issue:20 Volume:215 Page:1701022
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Chaleawpong Rawiwan¹,Promros Nathaporn¹,Charoenyuenyao Peerasil¹,Nopparuchikun Adison¹,Sittimart Phongsaphak¹,Nogami Tomohiro²,Yoshitake Tsuyoshi²

Affiliation:

1. Department of Physics; Faculty of Science; King Mongkut's Institute of Technology Ladkrabang; 1 Soi Chalongkrung 1, Ladkrabang Bangkok 10520 Thailand

2. Department of Applied Science for Electronics and Materials; Kyushu University; 6-1 Kasuga Fukuoka 816-8580 Japan

Funder

Japan International Cooperation Agency

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201701022/fullpdf

Reference53 articles.

1. Band-gap modifications ofβ−FeSi2with lattice distortions corresponding to the epitaxial relationships on Si(111)

2. Surface electron‐diffraction patterns of β‐FeSi2films epitaxially grown on silicon

3. Epitaxial growth of semiconducting β-FeSi2 and its application to light-emitting diodes

4. Optical absorption and photoluminescence studies of β‐FeSi2prepared by heavy implantation of Fe+ions into Si

5. Characterization of near-infrared n-type β-FeSi2/p-type Si heterojunction photodiodes at room temperature

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