Temperature dependency of impedance, dielectric, and conductivity properties for Si-p/beta-FeSi2-n heterostructures created through facing target sputtering-Reference-Cited by-同舟云学术

Temperature dependency of impedance, dielectric, and conductivity properties for Si-p/beta-FeSi2-n heterostructures created through facing target sputtering

Published:2024-08 Issue: Volume:179 Page:108499
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Borwornpornmetee Nattakorn,Sittimart Phongsaphak,Traiprom Thawichai,Paosawatyanyong Boonchoat,Yoshitake Tsuyoshi,Promros Nathaporn^ORCID

Funder

King Mongkut's Institute of Technology Ladkrabang

Publisher

Elsevier BV

Reference76 articles.

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2. Epitaxial growth of β-FeSi2 thin films on Si(111) substrates by radio frequency magnetron sputtering and their application to near-infrared photodetection;Promros;Jpn. J. Appl. Phys.,2016

3. Direct epitaxial growth of semiconducting β-FeSi2 thin films on Si(111) by facing targets direct-current sputtering;Yoshitake;Appl. Phys. Lett.,2006

4. Investigation of morphological surface features, wetting behavior and mechanical traits under various substrate temperatures for beta iron disilicide prepared via facing-targets sputtering;Charoenyuenyao;Mater. Sci. Semicond. Process.,2022

5. Low-temperature annealing of n-type β-FeSi2/p-Type Si heterojunctions;Shaban;Jpn. J. Appl. Phys.,2008

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