Low-Temperature Annealing of n-Type β-FeSi2/p-Type Si Heterojunctions
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference16 articles.
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1. Temperature dependency of impedance, dielectric, and conductivity properties for Si-p/beta-FeSi2-n heterostructures created through facing target sputtering;Materials Science in Semiconductor Processing;2024-08
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3. Production of p-Type Si/n-Type β-FeSi2 Heterojunctions Using Facing-Targets Direct-Current Sputtering and Evaluation of Their Resistance and Interface State Density;physica status solidi (a);2018-10
4. Simulation of n-β-FeSi2/p-Si heterojunction solar cells based on AFORS-HET;Modern Physics Letters B;2017-07-27
5. Carrier transportation properties and series resistance of n-type β-FeSi2/p-type Si heterojunctions fabricated by RF magnetron sputtering;Japanese Journal of Applied Physics;2017-05-16
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