Growth of β‐FeSi2on Si(111) by chemical beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112008
Reference18 articles.
1. Semiconducting silicide‐silicon heterojunction elaboration by solid phase epitaxy
2. Silicide epilayers: recent developments and prospects for a Si-compatible technology
3. Silicide epilayers: recent developments and prospects for a Si-compatible technology
4. Epitaxy of fluorite-structure silicides: metastable cubic FeSi2 on Si(111)
5. Epitaxy of fluorite-structure silicides: metastable cubic FeSi2 on Si(111)
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1. Anomalous temperature-dependency of phonon line widths probed by Raman scattering from β-FeSi2 thin films;Journal of Applied Physics;2011-04-15
2. Adsorption of Fe(CO)5 on Si(111) and adsorbate induced surface reorganisation at low temperatures: a THREELS study;Surface Science;2004-08
3. High-resolution transmission electron microscopy study of interface structure and strain in epitaxial β-FeSi2 on Si (111) substrate;Journal of Crystal Growth;2003-07
4. Growth evolution of β-FeSi2 layers grown by Sb mediated reactive deposition epitaxy;Journal of Crystal Growth;2002-04
5. Optical properties of Fe(<formula><inf><roman>1-x</roman></inf></formula>)Co<formula><inf><roman>x</roman></inf></formula>Si<formula><inf><roman>2</roman></inf></formula> thin films;SPIE Proceedings;2000-04-17
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