Growth and morphological properties of β-FeSi2 layers

Author:

Tanaka S.,Yamamoto A.,Makiuchi S.,Matsuyama T.,Rebien M.,Henrion W.,Tatsuoka H.,Tanaka M.,Liu Z.-Q.,Kuwabara H.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference8 articles.

1. K. Miyake, Y. Makita, Y. Maeda, T. Suemasu (Guest Ed.), Special Issue on Silicide Kankyo Semiconductors – Ecologically Friendly Semiconductors – Optoelectronic and Energy Research for Next Generation, Thin Solid Films, vol. 381, No. 2, Elsevier, Amsterdam, 2001.

2. Growth evolution of β-FeSi2 layers grown by Sb mediated reactive deposition epitaxy

3. Ellipsometric comparison of the native oxides of silicon and semiconducting iron disilicide (β-FeSi2)

4. Optical investigations of β-FeSi2 with and without Cr addition

5. Application of UV-VIS and FTIR Spectroscopic Ellipsometry to the Characterization of Wet-Chemically Treated Si Surfaces

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