Author:
Kobayashi Naoto,Hasegawa Masataka,Hayashi Nobuyuki,Tanoue Hisao,Shibata Hajime,Makita Yunosuke
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
7 articles.
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1. Regrowth characteristics of SiGe/Si by IBIEC and SPEG;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-07
2. Ion Implantation;Kirk-Othmer Encyclopedia of Chemical Technology;2005-03-18
3. Formation of SiGe alloys using ion beam mixing followed by ion beam induced epitaxial crystallization;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-05
4. Ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG) of Si1−xCx layers in Si fabricated by C ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-05
5. Photoluminescence studies of epitaxial Si1−xGex and Si1−x−yGexCy layers on Si formed by ion beam synthesis;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-01