Formation of SiGe alloys using ion beam mixing followed by ion beam induced epitaxial crystallization-Reference-Cited by-同舟云学术

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Formation of SiGe alloys using ion beam mixing followed by ion beam induced epitaxial crystallization

Published:2003-05 Issue: Volume:206 Page:999-1002
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Kitahara N.,Echigo T.,Otani T.,Yamamoto Y.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference8 articles.

1. Ion beam mixing of Au marker in Pt and Pt marker in Au by 7 MeV Ag ions

2. Element-, time- and spatially-resolved images of scattered and recoiled atoms

3. Ion beam induced epitaxial crystallization of GexSi1−x/Si structures

4. Mechanism of low-temperature (≤300 °C) crystallization and amorphization for the amorphous Si layer on the crystalline Si substrate by high-energy heavy-ion beam irradiation

5. Elevated temperature Ge implantation into Si and the effect of subsequent thermal annealing

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Regrowth characteristics of SiGe/Si by IBIEC and SPEG;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-07

2. Ion beam synthesis of germanium nanostructures;Surface and Coatings Technology;2009-06

3. Ion Implantation;Kirk-Othmer Encyclopedia of Chemical Technology;2005-03-18

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