Ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG) of Si1−xCx layers in Si fabricated by C ion implantation-Reference-Cited by-同舟云学术

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Ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG) of Si1−xCx layers in Si fabricated by C ion implantation

Published:1997-05 Issue: Volume:127-128 Page:350-354
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Kobayashi N.,Zhu D.H.,Hasegawa M.,Katsumata H.,Tanaka Y.,Hayashi N.,Makita Y.,Shibata H.,Uekusa S.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference16 articles.

1. Heterojunction bipolar transistors using Si-Ge alloys

2. Electro‐optical and nonlinear optical coefficients of ordered group IV semiconductor alloys

3. Binary Alloy Phase Diagrams,1986

4. Synthesis of Si1−yCyalloys by molecular beam epitaxy

5. Precipitation and relaxation in strained Si1−yCy/Si heterostructures

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of SHI irradiation on the formation of buried SiC;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-07

2. Defect-impurity engineering in implanted silicon;Physics-Uspekhi;2003-08-31

3. Ion-beam characterization in superlattices;Handbook of Thin Films;2002

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