Author:
Hatzopoulos N.,Bussmann U.,Robinson A.K.,Hemment P.L.F.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
12 articles.
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1. Materials Processing;Ion Beams in Materials Processing and Analysis;2012
2. Buried porous SiNxlayer in nitrogen-implanted silicon;physica status solidi (c);2009-07
3. Structural characterization of buried nitride layers formed by nitrogen ion implantation in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-04
4. Structural characterization of high-dose C++N+ ion-implanted (111) Si;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-11
5. Low-energy carbon and nitrogen ion implantation in silicon;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001