Affiliation:
1. IBM General Technology Division, Essex Junction, Vermont 05452
Publisher
The Electrochemical Society
Subject
Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Cited by
44 articles.
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1. Effect of MeV nitrogen ion implantation on the resistivity transition in Czochralski silicon wafers;Journal of the Korean Physical Society;2012-12
2. Soi Materials;Silicon-on-Insulator Technology: Materials to VLSI;2004
3. The role of Fe on the crystallisation of α-Si3N4 from amorphous Si–N formed by ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01
4. Improvement in buried silicon nitride silicon-on-insulator structures by fluorine-ion implantation;Journal of Applied Physics;1998-04
5. SOI Materials;Silicon-on-Insulator Technology: Materials to VLSI;1997