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Amorphous Si — the role of MeV implantation in elucidating defect and thermodynamic properties

  • Published:1991-04 Issue:1-4 Volume:55 Page:533-543
  • ISSN:0168-583X
  • Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Poate J.M.,Coffa S.,Jacobson D.C.,Polman A.,Roth J.A.,Olson G.L.,Roorda S.,Sinke W.,Custer J.S.,Thompson M.O.,Spaepen F.,Donovan E.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 34 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Amorphization of gold film on silicon single crystal by hardness indentation at room temperature;Philosophical Magazine;2023-09-14

2. Atomistic structures of nano-engineered SiC and radiation-induced amorphization resistance;Journal of Nuclear Materials;2015-10

3. Modeling Two Dimensional Solid Phase Epitaxial Growth for Patterned Ge Substrates;ECS Transactions;2013-03-15

4. Modeling Solid Phase Epitaxial Growth for Patterned Ge Substrates;ECS Journal of Solid State Science and Technology;2013

5. Interface stability in stressed solid-phase epitaxial growth;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-07
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