Improved wafer charge neutralization system in varian high current implanters
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference10 articles.
1. Wafer chargeup study on the PR-80 high current ion implantation machine
2. Charging and charge neutralization in ion implantation
3. Wafer charging control in the 160 XP high current implanter
4. A new computer designed faraday system for high current ion implantation systems
5. Ion Implantation Science and Technology;Glawischnig,1984
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The ring plasma neutralizer for ion beam devices;Surface and Coatings Technology;1994-08
2. In-Situ Control of Wafer Charge Neutralization During High Current Ion Implants;MRS Proceedings;1993
3. Results of GSVIUG implanter charging round-robin;Ion Implantation Technology–92;1993
4. The NISSIN EXCEED-8000 High Current Ion Implantation System;Ion Implantation Technology–92;1993
5. Advances in the Extrion 1000 and XP Series high-current ion implantation systems;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-04
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