Wafer charging control in the 160 XP high current implanter-Reference-Cited by-同舟云学术

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Wafer charging control in the 160 XP high current implanter

Published:1989-02 Issue: Volume:37-38 Page:492-496
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Mckenna C.M.,Pedersen B.O.,Lee J.K.,Outcault R.F.,Kikuchi S.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference14 articles.

1. Semicond. Int.;Gat,1985

2. IEEE/IRPS Conf. on Reliability Physics;Baglee,1984

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of plasma induced charges on thin oxide of CMOS technologies;Microelectronics Journal;1996-10

2. Process‐Induced Gate Oxide Charge Collector Damage;Journal of The Electrochemical Society;1992-10-01

3. Wafer Charging Control in High‐Current Implanters;Journal of The Electrochemical Society;1991-10-01

4. Improved wafer charge neutralization system in varian high current implanters;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-04

5. The Nissin PR-80A high current ion implantation system;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-04

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