The Nissin PR-80A high current ion implantation system-Reference-Cited by-同舟云学术

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The Nissin PR-80A high current ion implantation system

Published:1991-04 Issue:1-4 Volume:55 Page:443-447
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Kawai T.,Chohtokudani M.,Naito M.,Hiramatsu T.,Sasaki M.,Sunouchi T.,Nishigami Y.,Matsumoto T.,Nakaya M.,Nakazawa M.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference7 articles.

1. Wafer chargeup study on the PR-80 high current ion implantation machine

2. Charging and charge neutralization in ion implantation

3. Charging and charge neutralization in ion implantation

4. Wafer charging control in the 160 XP high current implanter

5. PR-80 high current ion implantation machine

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The NISSIN EXCEED-8000 High Current Ion Implantation System;Ion Implantation Technology–92;1993

2. Control of ion beam current density and profile for high current ion implantation systems;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-04

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