Advances in the Extrion 1000 and XP Series high-current ion implantation systems-Reference-Cited by-同舟云学术

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Advances in the Extrion 1000 and XP Series high-current ion implantation systems

Published:1991-04 Issue:1-4 Volume:55 Page:428-433
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Harris M.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference10 articles.

1. Proc. 6th Int. Conf. on Ion Implantation;Outcault,1986

2. S. Felch, B. Basra and C. McKenna, Microelectronic Manufacturing and Testing, Varian SEG Report No. 153.

3. Proc. 7th Int. Conf. on Ion Implantation;McKenna,1988

4. these Proceedings 8th Int. Conf. on Ion Implantation Technology;Mehta,1991

5. these Proceedings 8th Int. Conf. on Ion Implantation Technology;Walther,1991

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Control system for a 300 kV ion implanter;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-05

2. Defects produced in Sip+ndiodes by B+implantation at liquid nitrogen temperature or −60 °C;Journal of Applied Physics;1994-04

3. Process Control Issues in the Varian E1000 High Current Implanter;Ion Implantation Technology–92;1993

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