β-NMR study on the lattice locations of boron implanted into silicon-Reference-Cited by-同舟云学术

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β-NMR study on the lattice locations of boron implanted into silicon

Published:1992-01 Issue:1-2 Volume:63 Page:173-178
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Seelinger W.,Fischer B.,Diehl E.,Ergezinger K.-H.,Frank H.-P.,Ittermann B.,Mai F.,Welker G.,Ackermann H.,Stöckmann H.J.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference24 articles.

1. Defects in irradiated silicon: EPR and electron-nuclear double resonance of interstitial boron

2. EPR of a trapped vacancy in boron-doped silicon

3. Electronic and atomic structure of the boron-vacancy complex in silicon

4. THE LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICON

5. CHANNELING STUDY OF BORON‐IMPLANTED SILICON

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The A _Si –Si _i Defect Model of Light‐Induced Degradation (LID) in Silicon: A Discussion and Review;physica status solidi (a);2022-08-16

2. Spectroscopic characterization of implanted boron in microcrystalline silicon by β-NMR;Physica B: Condensed Matter;2001-12

3. Mobility of interstitial B in Si analyzed by a stochastic reorientation model;Physica B: Condensed Matter;2001-12

4. Behavior of boron implanted in semiconductor Si;Hyperfine Interactions;2001

5. First-principles local-orbital study of the boron-induced reconstruction of Si(001);Physical Review B;1998-04-15

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