Spectroscopic characterization of implanted boron in microcrystalline silicon by β-NMR-Reference-Cited by-同舟云学术

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Spectroscopic characterization of implanted boron in microcrystalline silicon by β-NMR

Published:2001-12 Issue: Volume:308-310 Page:248-252
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Mai F.,Ittermann B.,Füllgrabe M.,Heemeier M.,Kroll F.,Marbach K.,Meier P.,Mell H.,Peters D.,Thieß H.,Ackermann H.,Stöckmann H.-J.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Amorphous and Microcrystalline Semiconductor Devices, Vol. 1;Willecke,1992

2. Defect properties of implanted boron in ZnSe

3. D. Ruff, Ph.D. Thesis, University of Marburg, 1999.

4. Bulk-doping-controlled implantation site of boron in silicon

5. β-NMR study on the lattice locations of boron implanted into silicon

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