Mobility of interstitial B in Si analyzed by a stochastic reorientation model-Reference-Cited by-同舟云学术

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Mobility of interstitial B in Si analyzed by a stochastic reorientation model

Published:2001-12 Issue: Volume:308-310 Page:236-239
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Ittermann B.,Peters D.,Füllgrabe M.,Kroll F.,Ackermann H.,Stöckmann H.-J.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. β NMR of Nonsubstitutional ¹²B after Implantation into P-Type Silicon

2. β-NMR study on the lattice locations of boron implanted into silicon

3. Behaviour of Boron After Implantation into Silicon-Schottky Diodes: A β-NMR Study on the Fermi-Level Dependence

4. Species and dose dependence of ion implantation damage induced transient enhanced diffusion

5. Defects in irradiated silicon: EPR and electron-nuclear double resonance of interstitial boron

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nuclear magnetic resonance study of Li implanted in a thin film of niobium;Physical Review B;2009-11-13

2. Dopants;Computational Microelectronics;2004

3. NMR and β-NMR Studies of Diffusion in Interface-Dominated and Disordered Solids;Diffusion in Condensed Matter

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