Roles of implantation temperature and ion dose rate in ion-beam synthesis of buried Si3N3 layers
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference20 articles.
1. Fabrication of buried layers of SiO2 and Si3N4 a using ion beam synthesis
2. Properties of ion beam synthesized buried silicon nitride layers with rectangular nitrogen profiles
3. The effect of beam current and dose on the formation of buried silicon nitride layers by nitrogen implantation with a stationary beam
4. Formation of ß-Si3N4 during high temperature nitrogen implantation
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1. Silicon-on-Insulator Structures Produced by Ion-Beam Synthesis and Hydrogen Transfer;Advances in Semiconductor Nanostructures;2017
2. Study of structure and surface modification of silicon-on-insulator (SOI) devices synthesized by dual ion implantation;Surface and Coatings Technology;2009-06
3. Structural characterization of buried nitride layers formed by nitrogen ion implantation in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-04
4. Synthesis of silicon oxynitride layers by dual ion-implantation and their annealing behaviour;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-12
5. The simulation of two-beam high-dose ion implantation into solid targets;Technical Physics;2001-11
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