Properties of ion beam synthesized buried silicon nitride layers with rectangular nitrogen profiles-Reference-Cited by-同舟云学术

Properties of ion beam synthesized buried silicon nitride layers with rectangular nitrogen profiles

Published:1987-01 Issue: Volume:19-20 Page:285-289
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Skorupa W.,Wollschläger K.,Kreissig U.,Grötzschel R.,Bartsch H.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference17 articles.

2. Proc. 7th Int. Conf. Ion Implantation into Semiconductors and Related Materials;Kreissig,1983

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