Formation of ß-Si3N4 during high temperature nitrogen implantation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference6 articles.
1. CMOS on buried nitride—A VLSI SOI technology
2. Fabrication of buried layers of SiO2 and Si3N4 a using ion beam synthesis
3. The effect of beam current and dose on the formation of buried silicon nitride layers by nitrogen implantation with a stationary beam
4. Characterization of buried silicon-nitride formed by nitrogen implantation
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Roles of implantation temperature and ion dose rate in ion-beam synthesis of buried Si3N3 layers;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-05
2. Synthesis of buried insulating layers in silicon by ion implantation;Materials Chemistry and Physics;1992-06
3. Substrate Temperature Effects on Properties of Silicon Nitride Films Deposited by Ion Beam Assisted Deposition;MRS Proceedings;1990
4. Si3N4 crystallization during high temperature nitrogen implantation into silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-03
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