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A dual source low-energy ion implantation system for use in silicon molecular beam epitaxy

  • Published:1991-04 Issue:1-4 Volume:55 Page:310-313
  • ISSN:0168-583X
  • Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Gottdang A.,Eich K.,Hassenbürger A.,Schulte W.H.,Cleff B.,Mous D.J.W.,Koudijs R.,van de Walle G.F.A.,Politiek J.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion Beam Deposition and Cleaning;Low-Energy Ion Irradiation of Materials;2022

2. Characterization of a single electrode focusing lens for ion beam deceleration;Instrumentation Science & Technology;2016-05-11

3. Germanium and Germanium Compounds;Kirk-Othmer Encyclopedia of Chemical Technology;2011-07-15

4. Germanium and Germanium Compounds;Kirk‐Othmer Encyclopedia of Chemical Technology;2004-02-13

5. Fluorine Compounds, Inorganic, Germanium;Kirk-Othmer Encyclopedia of Chemical Technology;2000-12-04
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