Insitudoping by As ion implantation of silicon grown by molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341350
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1. Arsenic doping in Si-MBE using low energy ion implantation (LEII);Selected Topics in Group IV and II–VI Semiconductors;1996
2. Arsenic doping in Si-MBE using low energy ion implantation (LEII);Journal of Crystal Growth;1995-12
3. Low Energy Ion Implantation of as During Si-MBE;MRS Proceedings;1995
4. Diamond Doping by Low Energy Ion Implantation During Growth;MRS Proceedings;1993
5. On the electron microscope contrast of doped semiconductor layers;Philosophical Magazine A;1991-04
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