Tuning the effective bandgap of a silicon doping superlattice

Abstract

In this paper, we examine the tunability of the effective bandgap and carrier concentration in a silicon-doping superlattice with narrow n+-doped layers and wide p-doped layers. Quantitative tunability parameters are defined and their variation with dopant concentration and temperature are calculated self-consistently in the effective mass and Hartree approximations. It is found that the tunabilities increase as doping is increased or as temperature is decreased.